WSF70N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 113 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
WSF70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF70N10 Datasheet (PDF)
wsf70n10.pdf
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WSF70N10 N-Ch MOSFETGeneral Description Product SummeryThe WSF70N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 10m 70Agate charge for most of the synchronous buck converter applications . Applications The WSF70N10 meet the RoHS and Green Power Management in TV Converter. Prod
wsf70p03.pdf
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WSF70P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF70P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 7.5m -65Afor most of the synchronous buck converter applications . Applications The WSF70P03 meet the RoHS and Green Product requirement , 100% EAS guarantee
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