WSF70N10 MOSFET Datasheet: N-Ch, 100V, 70A. Full specification with pinout and replacement list

WSF70N10 Specs and Replacement

Type Designator: WSF70N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

WSF70N10 substitution

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WSF70N10 datasheet

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WSF70N10 N-Ch MOSFET General Description Product Summery The WSF70N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 10m 70A gate charge for most of the synchronous buck converter applications . Applications The WSF70N10 meet the RoHS and Green Power Management in TV Converter. Prod... See More ⇒

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WSF70P03 P-Ch MOSFET General Description Product Summery The WSF70P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 7.5m -65A for most of the synchronous buck converter applications . Applications The WSF70P03 meet the RoHS and Green Product requirement , 100% EAS guarantee... See More ⇒

Detailed specifications: WSF45P10, WSF50N10, WSF50N10G, WSF50P04, WSF50P10, WSF60100, WSF6012, WSF60N06, 20N50, WSF70P03, WSF80N06H, WSF90P03, WSG02N20, WSG02P06, WSG03N10, WSK140N08, WSK180N04