All MOSFET. WSF70N10 Datasheet

 

WSF70N10 Datasheet and Replacement


   Type Designator: WSF70N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

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WSF70N10 Datasheet (PDF)

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WSF70N10

WSF70N10 N-Ch MOSFETGeneral Description Product SummeryThe WSF70N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 10m 70Agate charge for most of the synchronous buck converter applications . Applications The WSF70N10 meet the RoHS and Green Power Management in TV Converter. Prod

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WSF70N10

WSF70P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF70P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 7.5m -65Afor most of the synchronous buck converter applications . Applications The WSF70P03 meet the RoHS and Green Product requirement , 100% EAS guarantee

Datasheet: WSF45P10 , WSF50N10 , WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , WSF6012 , WSF60N06 , 2N60 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 .

History: ME3443 | IRLML0100TRPBF-1 | SUN0765I2 | IPU78CN10N | NCE3050 | WVM3N10 | 3407

Keywords - WSF70N10 MOSFET datasheet

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