WSF80N06H MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF80N06H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.7 nC
trⓘ - Rise Time: 9.2 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
WSF80N06H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF80N06H Datasheet (PDF)
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wsf80n06h.pdf
wsf80n06h.pdf
WSF80N06HN-Ch MOSFETGeneral DescriptionProduct SummeryWSF80N06H use advanced VD MOST technology to provide low RDS(ON), low BVDSS RDSON ID gate charge, fast switching This device is 60V 8.0m 70Aspecially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Applications Excellent stability and uniformity or Invertors
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
