All MOSFET. WSF80N06H Datasheet

 

WSF80N06H Datasheet and Replacement


   Type Designator: WSF80N06H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28.7 nC
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
 

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WSF80N06H Datasheet (PDF)

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WSF80N06H

WSF80N06HN-Ch MOSFETGeneral DescriptionProduct SummeryWSF80N06H use advanced VD MOST technology to provide low RDS(ON), low BVDSS RDSON ID gate charge, fast switching This device is 60V 8.0m 70Aspecially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Applications Excellent stability and uniformity or Invertors

Datasheet: WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , WSF6012 , WSF60N06 , WSF70N10 , WSF70P03 , IRF2807 , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 .

History: WSF60100

Keywords - WSF80N06H MOSFET datasheet

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