WSF80N06H Specs and Replacement
Type Designator: WSF80N06H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.2 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
WSF80N06H substitution
- MOSFET ⓘ Cross-Reference Search
WSF80N06H datasheet
wsf80n06h.pdf
WSF80N06H N-Ch MOSFET General Description Product Summery WSF80N06H use advanced VD MOST technology to provide low RDS(ON), low BVDSS RDSON ID gate charge, fast switching This device is 60V 8.0m 70A specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Applications Excellent stability and uniformity or Invertors ... See More ⇒
Detailed specifications: WSF50N10G, WSF50P04, WSF50P10, WSF60100, WSF6012, WSF60N06, WSF70N10, WSF70P03, IRF2807, WSF90P03, WSG02N20, WSG02P06, WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04
Keywords - WSF80N06H MOSFET specs
WSF80N06H cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1828 | 2SK2009 | SW4N65D | STFU23N80K5 | TPM62D0LFB | CS12N65A8R | NTD5867NL-1G
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