WSF90P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF90P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 808 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
WSF90P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF90P03 Datasheet (PDF)
wsf90p03.pdf
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WSF90P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF90P03 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 5m -85Afor most of the synchronous buck converter applications . Applications The WSF90P03 meet the RoHS and Green High Frequency Point-of-Load Synchronous
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