WSG03N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSG03N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
WSG03N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSG03N10 Datasheet (PDF)
..1. Size:1265K winsok
wsg03n10.pdf
wsg03n10.pdf
WSG03N10 N-Ch MOSFETGeneral Description Product SummeryThe WSG03N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 100V 90m 4.8Aof the small power switching and load switch applications. Applications The WSG03N10 meet the RoHS and Green Product requirement with full fu
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