All MOSFET. WSG03N10 Datasheet

 

WSG03N10 Datasheet and Replacement


   Type Designator: WSG03N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
 

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WSG03N10 Datasheet (PDF)

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WSG03N10

WSG03N10 N-Ch MOSFETGeneral Description Product SummeryThe WSG03N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 100V 90m 4.8Aof the small power switching and load switch applications. Applications The WSG03N10 meet the RoHS and Green Product requirement with full fu

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: FDBL9403L-F085 | STD16NF06LT4 | WST3401A | SUP70060E | FDB9506L-F085 | SML30J130F | 2N70Z

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