WSG03N10 PDF and Equivalents Search

 

WSG03N10 Specs and Replacement

Type Designator: WSG03N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT223

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WSG03N10 datasheet

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WSG03N10

WSG03N10 N-Ch MOSFET General Description Product Summery The WSG03N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 100V 90m 4.8A of the small power switching and load switch applications. Applications The WSG03N10 meet the RoHS and Green Product requirement with full fu... See More ⇒

Detailed specifications: WSF6012, WSF60N06, WSF70N10, WSF70P03, WSF80N06H, WSF90P03, WSG02N20, WSG02P06, 8N60, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, WSP08N10, WSP10N10

Keywords - WSG03N10 MOSFET specs

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