All MOSFET. WSK180N04 Datasheet

 

WSK180N04 Datasheet and Replacement


   Type Designator: WSK180N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1027 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO263
 

 WSK180N04 substitution

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WSK180N04 Datasheet (PDF)

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WSK180N04

WSK180N04 N-Ch MOSFETGeneral Description Product SummeryThe WSK180N04 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 40V 3.0m 180Aand gate charge for most of the synchronous buck converter applications . Applications The WSK180N04 meet the RoHS and Switching application Green Product requ

Datasheet: WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , IRF520 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 , WSP16N10 .

History: NCE1826K | JCS12N65ST | IXFB50N80Q2 | KND8103A | SI5406CDC | SI4862DY | IRFU7740PBF

Keywords - WSK180N04 MOSFET datasheet

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