All MOSFET. WSK180N04 Datasheet

 

WSK180N04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSK180N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1027 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO263

 WSK180N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSK180N04 Datasheet (PDF)

 ..1. Size:657K  winsok
 wsk180n04.pdf

WSK180N04 WSK180N04

WSK180N04 N-Ch MOSFETGeneral Description Product SummeryThe WSK180N04 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 40V 3.0m 180Aand gate charge for most of the synchronous buck converter applications . Applications The WSK180N04 meet the RoHS and Switching application Green Product requ

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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