WSK200N08A PDF and Equivalents Search

 

WSK200N08A Specs and Replacement

Type Designator: WSK200N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 345 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1029 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

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WSK200N08A datasheet

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 wsk200n08a.pdf pdf_icon

WSK200N08A

WSK200N08A N-Ch MOSFET General Description Product Summery The WSK200N08A is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 80V 3m 200A gate charge for most of the synchronous buck converter applications . Applications The WSK200N08A meet the RoHS and Green Product requirement,100% EAS guaran... See More ⇒

Detailed specifications: WSF70P03, WSF80N06H, WSF90P03, WSG02N20, WSG02P06, WSG03N10, WSK140N08, WSK180N04, AO3400A, WSK220N04, WSP05N15, WSP06N10, WSP08N10, WSP10N10, WSP14N10, WSP16N10, WSP4016

Keywords - WSK200N08A MOSFET specs

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