WSK200N08A Datasheet and Replacement
Type Designator: WSK200N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 345 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 197 nC
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1029 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
WSK200N08A substitution
WSK200N08A Datasheet (PDF)
..1. Size:1200K winsok
wsk200n08a.pdf
wsk200n08a.pdf
WSK200N08A N-Ch MOSFETGeneral Description Product SummeryThe WSK200N08A is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 80V 3m 200Agate charge for most of the synchronous buck converter applications . Applications The WSK200N08A meet the RoHS and Green Product requirement,100% EAS guaran
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