WSK200N08A MOSFET. Datasheet pdf. Equivalent
Type Designator: WSK200N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 345 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 197 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1029 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
WSK200N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSK200N08A Datasheet (PDF)
..1. Size:1200K winsok
wsk200n08a.pdf
wsk200n08a.pdf
WSK200N08A N-Ch MOSFETGeneral Description Product SummeryThe WSK200N08A is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 80V 3m 200Agate charge for most of the synchronous buck converter applications . Applications The WSK200N08A meet the RoHS and Green Product requirement,100% EAS guaran
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
