All MOSFET. WSK200N08A Datasheet

 

WSK200N08A Datasheet and Replacement


   Type Designator: WSK200N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 345 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1029 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

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WSK200N08A Datasheet (PDF)

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WSK200N08A

WSK200N08A N-Ch MOSFETGeneral Description Product SummeryThe WSK200N08A is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 80V 3m 200Agate charge for most of the synchronous buck converter applications . Applications The WSK200N08A meet the RoHS and Green Product requirement,100% EAS guaran

Datasheet: WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , RU6888R , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 , WSP16N10 , WSP4016 .

History: STP5N80 | FDD6035AL | SSM70T03H | TK5P53D | FRM9140R | 2SK2222 | R6020KNX

Keywords - WSK200N08A MOSFET datasheet

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