All MOSFET. WSP05N15 Datasheet

 

WSP05N15 Datasheet and Replacement


   Type Designator: WSP05N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8
 

 WSP05N15 substitution

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WSP05N15 Datasheet (PDF)

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WSP05N15

WSP05N15 N-Ch MOSFETGeneral Description Product SummeryThe WSP05N15 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 6A150V 37mand gate charge for most of the synchronous buck converter applications . Applications The WSF05N10 meet the RoHS and Green Power Management for Boost Converters. P

Datasheet: WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , IRF1405 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 , WSP16N10 , WSP4016 , WSP4067 , WSP4067B .

History: WMO26N65C4 | 2SK2715 | WMN11N80M3 | WMJ020N10HGS | WMJ10N80D1 | SDF044JAA-U | WMO10N70D1

Keywords - WSP05N15 MOSFET datasheet

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