WSP05N15 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP05N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP8
WSP05N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP05N15 Datasheet (PDF)
..1. Size:1147K winsok
wsp05n15.pdf
wsp05n15.pdf
WSP05N15 N-Ch MOSFETGeneral Description Product SummeryThe WSP05N15 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 6A150V 37mand gate charge for most of the synchronous buck converter applications . Applications The WSF05N10 meet the RoHS and Green Power Management for Boost Converters. P
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