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WSP05N15 Specs and Replacement

Type Designator: WSP05N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP8

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WSP05N15 datasheet

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WSP05N15

WSP05N15 N-Ch MOSFET General Description Product Summery The WSP05N15 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 6A 150V 37m and gate charge for most of the synchronous buck converter applications . Applications The WSF05N10 meet the RoHS and Green Power Management for Boost Converters. P... See More ⇒

Detailed specifications: WSF90P03, WSG02N20, WSG02P06, WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, STP65NF06, WSP06N10, WSP08N10, WSP10N10, WSP14N10, WSP16N10, WSP4016, WSP4067, WSP4067B

Keywords - WSP05N15 MOSFET specs

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