WSP06N10 PDF and Equivalents Search

 

WSP06N10 Specs and Replacement

Type Designator: WSP06N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SOP8

WSP06N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

WSP06N10 datasheet

 ..1. Size:973K  winsok
 wsp06n10.pdf pdf_icon

WSP06N10

WSP06N10 N-Ch MOSFET General Description Product Summery The WSP06N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and 100V 85m 4.5A gate charge for most of the synchronous buck converter applications . Applications The WSP06N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒

Detailed specifications: WSG02N20, WSG02P06, WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, IRF1405, WSP08N10, WSP10N10, WSP14N10, WSP16N10, WSP4016, WSP4067, WSP4067B, WSP4068

Keywords - WSP06N10 MOSFET specs

 WSP06N10 cross reference

 WSP06N10 equivalent finder

 WSP06N10 pdf lookup

 WSP06N10 substitution

 WSP06N10 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.