All MOSFET. WSP06N10 Datasheet

 

WSP06N10 Datasheet and Replacement


   Type Designator: WSP06N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOP8
 

 WSP06N10 substitution

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WSP06N10 Datasheet (PDF)

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WSP06N10

WSP06N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP06N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and 100V 85m 4.5Agate charge for most of the synchronous buck converter applications . Applications The WSP06N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , IRF9640 , WSP08N10 , WSP10N10 , WSP14N10 , WSP16N10 , WSP4016 , WSP4067 , WSP4067B , WSP4068 .

History: SE80100GA | RU60E25R | 2SK1380 | WMJ10N80D1 | SDF054JAA-U | AP10TN028MT | TK50X15J1

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