All MOSFET. WSP08N10 Datasheet

 

WSP08N10 Datasheet and Replacement


   Type Designator: WSP08N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOP8
 

 WSP08N10 substitution

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WSP08N10 Datasheet (PDF)

 ..1. Size:1040K  winsok
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WSP08N10

WSP08N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP08N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 39m 7.0Aand gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power

Datasheet: WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , MMIS60R580P , WSP10N10 , WSP14N10 , WSP16N10 , WSP4016 , WSP4067 , WSP4067B , WSP4068 , WSP4099 .

History: AP65SL130DP | IRFU3706 | RU30E30L | MTP2N50 | SWX170R15ET | FTK7002E | PMN40UPEA

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