WSP08N10 Datasheet and Replacement
Type Designator: WSP08N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: SOP8
WSP08N10 substitution
WSP08N10 Datasheet (PDF)
wsp08n10.pdf

WSP08N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP08N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 39m 7.0Aand gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power
Datasheet: WSG02P06 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , IRF830 , WSP10N10 , WSP14N10 , WSP16N10 , WSP4016 , WSP4067 , WSP4067B , WSP4068 , WSP4099 .
History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G
Keywords - WSP08N10 MOSFET datasheet
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History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G



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