WSP08N10 Specs and Replacement
Type Designator: WSP08N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: SOP8
WSP08N10 substitution
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WSP08N10 datasheet
wsp08n10.pdf
WSP08N10 N-Ch MOSFET General Description Product Summery The WSP08N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 39m 7.0A and gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power ... See More ⇒
Detailed specifications: WSG02P06, WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, 7N60, WSP10N10, WSP14N10, WSP16N10, WSP4016, WSP4067, WSP4067B, WSP4068, WSP4099
Keywords - WSP08N10 MOSFET specs
WSP08N10 cross reference
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