All MOSFET. WSP10N10 Datasheet

 

WSP10N10 Datasheet and Replacement


   Type Designator: WSP10N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

 WSP10N10 substitution

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WSP10N10 Datasheet (PDF)

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WSP10N10

WSP10N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP10N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 22m 10Aand gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power M

Datasheet: WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , RU7088R , WSP14N10 , WSP16N10 , WSP4016 , WSP4067 , WSP4067B , WSP4068 , WSP4099 , WSP4406 .

History: IXFA3N120 | STB70NFS03LT4 | APT10086SLC | GSM4822S | IRFI4019HG-117P | SQM120N04-1M7 | HM2305

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