WSP10N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP10N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 164 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
WSP10N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP10N10 Datasheet (PDF)
..1. Size:661K winsok
wsp10n10.pdf
wsp10n10.pdf
WSP10N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP10N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 22m 10Aand gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power M
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