WSP10N10 PDF and Equivalents Search

 

WSP10N10 Specs and Replacement

Type Designator: WSP10N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

WSP10N10 substitution

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WSP10N10 datasheet

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WSP10N10

WSP10N10 N-Ch MOSFET General Description Product Summery The WSP10N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 22m 10A and gate charge for most of the synchronous buck converter applications . Applications The WSF08N10 meet the RoHS and Green Product requirement , 100% EAS Power M... See More ⇒

Detailed specifications: WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, WSP08N10, IRFZ48N, WSP14N10, WSP16N10, WSP4016, WSP4067, WSP4067B, WSP4068, WSP4099, WSP4406

Keywords - WSP10N10 MOSFET specs

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