WSP14N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP14N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.8 nC
trⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
WSP14N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP14N10 Datasheet (PDF)
..1. Size:1452K winsok
wsp14n10.pdf
wsp14n10.pdf
WSP14N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP14N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 16m 14Afor most of the synchronous buck converter applications . Applications The WSP14N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
