WSP14N10 Datasheet and Replacement
Type Designator: WSP14N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
WSP14N10 substitution
WSP14N10 Datasheet (PDF)
wsp14n10.pdf
WSP14N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP14N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 16m 14Afor most of the synchronous buck converter applications . Applications The WSP14N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed
Datasheet: WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , IRFZ46N , WSP16N10 , WSP4016 , WSP4067 , WSP4067B , WSP4068 , WSP4099 , WSP4406 , WSP4407 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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