All MOSFET. WSP16N10 Datasheet

 

WSP16N10 Datasheet and Replacement


   Type Designator: WSP16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
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WSP16N10 Datasheet (PDF)

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WSP16N10

WSP16N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP16N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 100V 8.9m 16ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSF16N10 meet the RoHS and Green Product requirement , 100% EAS DC/DC

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NVTFS4824N | SVGP20110NSTR | 2N6660-LCC4 | MXP4004AT | IXFG55N50 | IRLZ44NLPBF | MEE42942-G

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