All MOSFET. WSP16N10 Datasheet

 

WSP16N10 Datasheet and Replacement


   Type Designator: WSP16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
 

 WSP16N10 substitution

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WSP16N10 Datasheet (PDF)

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WSP16N10

WSP16N10 N-Ch MOSFETGeneral Description Product SummeryThe WSP16N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 100V 8.9m 16ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSF16N10 meet the RoHS and Green Product requirement , 100% EAS DC/DC

Datasheet: WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 , WSP10N10 , WSP14N10 , IRF1405 , WSP4016 , WSP4067 , WSP4067B , WSP4068 , WSP4099 , WSP4406 , WSP4407 , WSP4407A .

History: MTM13123 | NP89N04PDK

Keywords - WSP16N10 MOSFET datasheet

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