WSP16N10 Specs and Replacement
Type Designator: WSP16N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 898 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP8
WSP16N10 substitution
- MOSFET ⓘ Cross-Reference Search
WSP16N10 datasheet
wsp16n10.pdf
WSP16N10 N-Ch MOSFET General Description Product Summery The WSP16N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 100V 8.9m 16A RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSF16N10 meet the RoHS and Green Product requirement , 100% EAS DC/DC ... See More ⇒
Detailed specifications: WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, WSP08N10, WSP10N10, WSP14N10, IRF830, WSP4016, WSP4067, WSP4067B, WSP4068, WSP4099, WSP4406, WSP4407, WSP4407A
Keywords - WSP16N10 MOSFET specs
WSP16N10 cross reference
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WSP16N10 substitution
WSP16N10 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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