WSP8205 PDF and Equivalents Search

 

WSP8205 Specs and Replacement

Type Designator: WSP8205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSSOP8

WSP8205 substitution

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WSP8205 datasheet

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WSP8205

WSP8205 Dual N-Channel MOSFET Product Summery General Description The WSP8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.0A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8205 meet the RoHS and Green High Frequency Point-o... See More ⇒

Detailed specifications: WSP4984, WSP6024, WSP6039, WSP6044, WSP6047, WSP6064, WSP6067, WSP6946, P55NF06, WSP8810, WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08

Keywords - WSP8205 MOSFET specs

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