WSP8205 Specs and Replacement
Type Designator: WSP8205
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP8
WSP8205 substitution
- MOSFET ⓘ Cross-Reference Search
WSP8205 datasheet
wsp8205.pdf
WSP8205 Dual N-Channel MOSFET Product Summery General Description The WSP8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.0A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8205 meet the RoHS and Green High Frequency Point-o... See More ⇒
Detailed specifications: WSP4984, WSP6024, WSP6039, WSP6044, WSP6047, WSP6064, WSP6067, WSP6946, P55NF06, WSP8810, WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08
Keywords - WSP8205 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SWB075R06ET
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