WSP8810A Specs and Replacement
Type Designator: WSP8810A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 0.8 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TSSOP8
WSP8810A substitution
- MOSFET ⓘ Cross-Reference Search
WSP8810A datasheet
wsp8810a.pdf
WSP8810A Dual N-Channel MOSFET Product Summery General Description The WSP8810A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 20V 14.5m 7.0A density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8810A meet the RoHS and Green High Frequency Po... See More ⇒
wsp8810.pdf
WSP8810 Dual N-Channel MOSFET Product Summery General Description The WSP8810 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 11.5m 7.5A for most of the small power switching and load switch applications. Applications The WSP8810 meet the RoHS and Green Product requirement w... See More ⇒
Detailed specifications: WSP6039, WSP6044, WSP6047, WSP6064, WSP6067, WSP6946, WSP8205, WSP8810, 7N65, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08
Keywords - WSP8810A MOSFET specs
WSP8810A cross reference
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WSP8810A substitution
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