WSP8810A PDF and Equivalents Search

 

WSP8810A Specs and Replacement

Type Designator: WSP8810A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 0.8 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TSSOP8

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WSP8810A datasheet

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WSP8810A

WSP8810A Dual N-Channel MOSFET Product Summery General Description The WSP8810A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 20V 14.5m 7.0A density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSP8810A meet the RoHS and Green High Frequency Po... See More ⇒

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WSP8810A

WSP8810 Dual N-Channel MOSFET Product Summery General Description The WSP8810 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 11.5m 7.5A for most of the small power switching and load switch applications. Applications The WSP8810 meet the RoHS and Green Product requirement w... See More ⇒

Detailed specifications: WSP6039, WSP6044, WSP6047, WSP6064, WSP6067, WSP6946, WSP8205, WSP8810, 7N65, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08

Keywords - WSP8810A MOSFET specs

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