WSR10N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: WSR10N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
WSR10N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSR10N65F Datasheet (PDF)
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wsr10n65f.pdf
wsr10n65f.pdf
WSR10N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10Aof the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC
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