WSR10N65F Datasheet and Replacement
Type Designator: WSR10N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
WSR10N65F substitution
WSR10N65F Datasheet (PDF)
wsr10n65f.pdf

WSR10N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10Aof the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC
Datasheet: WSP6946 , WSP8205 , WSP8810 , WSP8810A , WSP9435 , WSP9926A , WSP9926B , WSP9936 , 8205A , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F .
History: FQP8N60C | 2SK1757 | AON6756 | MTB09N03V8 | SJMN360R70ZD | VS3625DB | MEM2301
Keywords - WSR10N65F MOSFET datasheet
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History: FQP8N60C | 2SK1757 | AON6756 | MTB09N03V8 | SJMN360R70ZD | VS3625DB | MEM2301



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