WSR10N65F PDF and Equivalents Search

 

WSR10N65F Specs and Replacement

Type Designator: WSR10N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

WSR10N65F substitution

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WSR10N65F datasheet

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WSR10N65F

WSR10N65F N-Ch MOSFET General Description Product Summery The WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10A of the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC ... See More ⇒

Detailed specifications: WSP6946, WSP8205, WSP8810, WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, 2SK3878, WSR140N08, WSR18P10, WSR200N08, WSR25N20, WSR45P10, WSR4N65F, WSR60N06, WSR7N65F

Keywords - WSR10N65F MOSFET specs

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