All MOSFET. WSR10N65F Datasheet

 

WSR10N65F Datasheet and Replacement


   Type Designator: WSR10N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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WSR10N65F Datasheet (PDF)

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WSR10N65F

WSR10N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10Aof the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC

Datasheet: WSP6946 , WSP8205 , WSP8810 , WSP8810A , WSP9435 , WSP9926A , WSP9926B , WSP9936 , IRFP260 , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F .

History: FDMS6681Z

Keywords - WSR10N65F MOSFET datasheet

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