All MOSFET. WSR18P10 Datasheet

 

WSR18P10 Datasheet and Replacement


   Type Designator: WSR18P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
 

 WSR18P10 substitution

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WSR18P10 Datasheet (PDF)

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WSR18P10

WSR18P10 P-Ch MOSFETGeneral Description Product SummeryThe WSR18P10 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 80m -25Afor most of the small power switching and load switch applications. Applications The WSR18P10 meet the RoHS and Green Product requirement with ful

Datasheet: WSP8810 , WSP8810A , WSP9435 , WSP9926A , WSP9926B , WSP9936 , WSR10N65F , WSR140N08 , K4145 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 .

History: MXP1007AT | SVT03110PL3

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