WSR18P10 Datasheet and Replacement
Type Designator: WSR18P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 50 nC
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220
WSR18P10 substitution
WSR18P10 Datasheet (PDF)
wsr18p10.pdf

WSR18P10 P-Ch MOSFETGeneral Description Product SummeryThe WSR18P10 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 80m -25Afor most of the small power switching and load switch applications. Applications The WSR18P10 meet the RoHS and Green Product requirement with ful
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