WSR18P10 PDF and Equivalents Search

 

WSR18P10 Specs and Replacement

Type Designator: WSR18P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

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WSR18P10 datasheet

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WSR18P10

WSR18P10 P-Ch MOSFET General Description Product Summery The WSR18P10 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 80m -25A for most of the small power switching and load switch applications. Applications The WSR18P10 meet the RoHS and Green Product requirement with ful... See More ⇒

Detailed specifications: WSP8810, WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, 2N7002, WSR200N08, WSR25N20, WSR45P10, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08

Keywords - WSR18P10 MOSFET specs

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