All MOSFET. WSR200N08 Datasheet

 

WSR200N08 Datasheet and Replacement


   Type Designator: WSR200N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 345 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 197 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1029 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220FB
 

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WSR200N08 Datasheet (PDF)

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WSR200N08

WSR200N08 N-Ch MOSFETGeneral Description Product SummeryThe WSR200N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 80V 2.9m 200Aand gate charge for most of the synchronous buck converter applications . Applications The WSR200N08 meet the RoHS and Green Switching applicationProduct requi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: WSP9926B | WSP9926A | FRM234R | FDMS4435BZ | VN0104N2 | FDMS6673BZ

Keywords - WSR200N08 MOSFET datasheet

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