All MOSFET. WSR200N08 Datasheet

 

WSR200N08 Datasheet and Replacement


   Type Designator: WSR200N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 345 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1029 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220FB
 

 WSR200N08 substitution

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WSR200N08 Datasheet (PDF)

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WSR200N08

WSR200N08 N-Ch MOSFETGeneral Description Product SummeryThe WSR200N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 80V 2.9m 200Aand gate charge for most of the synchronous buck converter applications . Applications The WSR200N08 meet the RoHS and Green Switching applicationProduct requi

Datasheet: WSP8810A , WSP9435 , WSP9926A , WSP9926B , WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , IRF1010E , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 .

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