WSR200N08 Datasheet. Specs and Replacement

Type Designator: WSR200N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 345 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1029 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO220FB

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WSR200N08 datasheet

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WSR200N08

WSR200N08 N-Ch MOSFET General Description Product Summery The WSR200N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 80V 2.9m 200A and gate charge for most of the synchronous buck converter applications . Applications The WSR200N08 meet the RoHS and Green Switching application Product requi... See More ⇒

Detailed specifications: WSP8810A, WSP9435, WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, IRF9540N, WSR25N20, WSR45P10, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10

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