WSR200N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSR200N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 345 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 197 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1029 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220FB
WSR200N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSR200N08 Datasheet (PDF)
..1. Size:663K winsok
wsr200n08.pdf
wsr200n08.pdf
WSR200N08 N-Ch MOSFETGeneral Description Product SummeryThe WSR200N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 80V 2.9m 200Aand gate charge for most of the synchronous buck converter applications . Applications The WSR200N08 meet the RoHS and Green Switching applicationProduct requi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
