All MOSFET. WSR45P10 Datasheet

 

WSR45P10 Datasheet and Replacement


   Type Designator: WSR45P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 125 nC
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO220AB
 

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WSR45P10 Datasheet (PDF)

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WSR45P10

WSR45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSR45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -100V 44m -40Acharge for most of the small power switching and load switch applications. Applications The WSR45P10 meet the RoHS and Green Product requirement with ful

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WSR7N65F | WSP9435 | SM2612NSC | WSR4N65F | IXTH23N25MA

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