WSR45P10 Datasheet. Specs and Replacement

Type Designator: WSR45P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO220AB

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WSR45P10 datasheet

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WSR45P10

WSR45P10 P-Ch MOSFET General Description Product Summery The WSR45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -100V 44m -40A charge for most of the small power switching and load switch applications. Applications The WSR45P10 meet the RoHS and Green Product requirement with ful... See More ⇒

Detailed specifications: WSP9926A, WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08, WSR25N20, IRLB4132, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, WST02N10

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