All MOSFET. WSR45P10 Datasheet

 

WSR45P10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSR45P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO220AB

 WSR45P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSR45P10 Datasheet (PDF)

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 wsr45p10.pdf

WSR45P10 WSR45P10

WSR45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSR45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -100V 44m -40Acharge for most of the small power switching and load switch applications. Applications The WSR45P10 meet the RoHS and Green Product requirement with ful

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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