All MOSFET. WSR45P10 Datasheet

 

WSR45P10 Datasheet and Replacement


   Type Designator: WSR45P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO220AB
 

 WSR45P10 substitution

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WSR45P10 Datasheet (PDF)

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WSR45P10

WSR45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSR45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -100V 44m -40Acharge for most of the small power switching and load switch applications. Applications The WSR45P10 meet the RoHS and Green Product requirement with ful

Datasheet: WSP9926A , WSP9926B , WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , 5N60 , WSR4N65F , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 .

History: WSR7N65F | FDMS7682 | FRM430H | SM3316NSQA

Keywords - WSR45P10 MOSFET datasheet

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