All MOSFET. WSR4N65F Datasheet

 

WSR4N65F Datasheet and Replacement


   Type Designator: WSR4N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

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WSR4N65F Datasheet (PDF)

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WSR4N65F

WSR4N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR4N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 2.6 4Aof the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: WSP9926B , WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , AO3401 , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 , WST03P06 .

History: WSR80N08

Keywords - WSR4N65F MOSFET datasheet

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