WSR4N65F Datasheet. Specs and Replacement

Type Designator: WSR4N65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

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WSR4N65F datasheet

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WSR4N65F

WSR4N65F N-Ch MOSFET General Description Product Summery The WSR4N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 2.6 4A of the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒

Detailed specifications: WSP9926B, WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08, WSR25N20, WSR45P10, AO3401, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, WST02N10, WST03P06

Keywords - WSR4N65F MOSFET specs

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