WSR60N06 Datasheet and Replacement
Type Designator: WSR60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220AB
WSR60N06 substitution
WSR60N06 Datasheet (PDF)
wsr60n06.pdf

WSR60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS(ON) 60V 12m 60Agate charge. It can be used in a wide variety of applications. Application Power switching application LED backlighting Uninterruptible power supplyFeatures High density cell
Datasheet: WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , 12N60 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 , WST03P06 , WST05N10 .
History: AOW15S65
Keywords - WSR60N06 MOSFET datasheet
WSR60N06 cross reference
WSR60N06 equivalent finder
WSR60N06 lookup
WSR60N06 substitution
WSR60N06 replacement
History: AOW15S65



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