All MOSFET. WSR60N06 Datasheet

 

WSR60N06 Datasheet and Replacement


   Type Designator: WSR60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220AB
 

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WSR60N06 Datasheet (PDF)

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WSR60N06

WSR60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS(ON) 60V 12m 60Agate charge. It can be used in a wide variety of applications. Application Power switching application LED backlighting Uninterruptible power supplyFeatures High density cell

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQPF11N50CF | STM8401 | BUK7514-30 | FDMS3572

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