WSR60N06 Datasheet. Specs and Replacement

Type Designator: WSR60N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO220AB

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WSR60N06 datasheet

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WSR60N06

WSR60N06 N-Ch MOSFET General Description Product Summery The WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS(ON) 60V 12m 60A gate charge. It can be used in a wide variety of applications. Application Power switching application LED backlighting Uninterruptible power supply Features High density cell... See More ⇒

Detailed specifications: WSP9936, WSR10N65F, WSR140N08, WSR18P10, WSR200N08, WSR25N20, WSR45P10, WSR4N65F, K3569, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, WST02N10, WST03P06, WST05N10

Keywords - WSR60N06 MOSFET specs

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