WSR60N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSR60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220AB
WSR60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSR60N06 Datasheet (PDF)
wsr60n06.pdf
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WSR60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR60N06 uses advanced trench technology BVDSS RDSON ID and design to provide excellent R with low DS(ON) 60V 12m 60Agate charge. It can be used in a wide variety of applications. Application Power switching application LED backlighting Uninterruptible power supplyFeatures High density cell
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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