WST02N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WST02N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.7 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT23
WST02N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WST02N10 Datasheet (PDF)
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wst02n10.pdf
wst02n10.pdf
WST02N10 N-Ch MOSFETProduct SummeryGeneral Description The WST02N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , 100V 180m 2.0Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST02N10 meet the RoHS and Green Product High Frequency Poi
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
