WST02N10 Datasheet. Specs and Replacement

Type Designator: WST02N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

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WST02N10 datasheet

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WST02N10

WST02N10 N-Ch MOSFET Product Summery General Description The WST02N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , 100V 180m 2.0A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST02N10 meet the RoHS and Green Product High Frequency Poi... See More ⇒

Detailed specifications: WSR45P10, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, 13N50, WST03P06, WST05N10, WST05N10L, WST2004, WST2005, WST2011, WST2026, WST2066

Keywords - WST02N10 MOSFET specs

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