All MOSFET. WST02N10 Datasheet

 

WST02N10 Datasheet and Replacement


   Type Designator: WST02N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.7 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23
 

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WST02N10 Datasheet (PDF)

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WST02N10

WST02N10 N-Ch MOSFETProduct SummeryGeneral Description The WST02N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , 100V 180m 2.0Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST02N10 meet the RoHS and Green Product High Frequency Poi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STM8358S | FDMS7602S | SPP80N08S2L

Keywords - WST02N10 MOSFET datasheet

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