WST03P06 Datasheet. Specs and Replacement

Type Designator: WST03P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.1 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT23

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WST03P06 datasheet

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WST03P06

WST03P06 P-Channel MOSFET General Description Product Summery The WST30P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -60V 88m -3.5A for most of the small power switching and load switch applications. Applications The WST30P06 meet the RoHS and Green Prod uct requirement with ... See More ⇒

Detailed specifications: WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, WST02N10, AON7410, WST05N10, WST05N10L, WST2004, WST2005, WST2011, WST2026, WST2066, WST2078

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