WST03P06 Datasheet and Replacement
Type Designator: WST03P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 33.1 nS
Cossⓘ - Output Capacitance: 41 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23
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WST03P06 Datasheet (PDF)
wst03p06.pdf

WST03P06P-Channel MOSFETGeneral Description Product SummeryThe WST30P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -60V 88m -3.5Afor most of the small power switching and load switch applications. Applications The WST30P06 meet the RoHS and Green Prod uct requirement with
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IPG16N10S4L-61A | SJMN380R65ZF | MTBA5N10FP | WMB053NV8HGS | IPD80R900P7 | SVGP104R5NS | F5001H
Keywords - WST03P06 MOSFET datasheet
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History: IPG16N10S4L-61A | SJMN380R65ZF | MTBA5N10FP | WMB053NV8HGS | IPD80R900P7 | SVGP104R5NS | F5001H



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