All MOSFET. WST03P06 Datasheet

 

WST03P06 Datasheet and Replacement


   Type Designator: WST03P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23
 

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WST03P06 Datasheet (PDF)

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WST03P06

WST03P06P-Channel MOSFETGeneral Description Product SummeryThe WST30P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -60V 88m -3.5Afor most of the small power switching and load switch applications. Applications The WST30P06 meet the RoHS and Green Prod uct requirement with

Datasheet: WSR4N65F , WSR60N06 , WSR7N65F , WSR80N06 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 , RFP50N06 , WST05N10 , WST05N10L , WST2004 , WST2005 , WST2011 , WST2026 , WST2066 , WST2078 .

History: IXTP220N075T | MXP4003CTS | WSR80N10

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