All MOSFET. WST03P06 Datasheet

 

WST03P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WST03P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 33.1 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23

 WST03P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WST03P06 Datasheet (PDF)

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 wst03p06.pdf

WST03P06 WST03P06

WST03P06P-Channel MOSFETGeneral Description Product SummeryThe WST30P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -60V 88m -3.5Afor most of the small power switching and load switch applications. Applications The WST30P06 meet the RoHS and Green Prod uct requirement with

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPCF8301

 

 
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