All MOSFET. WST05N10 Datasheet

 

WST05N10 Datasheet and Replacement


   Type Designator: WST05N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: SOT23
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WST05N10 Datasheet (PDF)

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WST05N10

WST05N10 N-Ch MOSFETGeneral Description Product SummeryThe WST05N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , 100V 135m 2.8Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST05N10 meet the RoHS and Green High Frequency Point-of-Lo

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WST05N10

WST05N10L N-Ch MOSFETGeneral Description Product SummeryThe WST05N10L is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 120m 3.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST05N10L meet the RoHS and Green Battery protection Pr

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SGSP592 | SVGP20110NSTR | 2SK784 | MXP4004AT | APT8024B2VFRG | 2SK1004 | MEE42942-G

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