WST05N10 Datasheet. Specs and Replacement

Type Designator: WST05N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: SOT23

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WST05N10 datasheet

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WST05N10

WST05N10 N-Ch MOSFET General Description Product Summery The WST05N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , 100V 135m 2.8A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST05N10 meet the RoHS and Green High Frequency Point-of-Lo... See More ⇒

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WST05N10

WST05N10L N-Ch MOSFET General Description Product Summery The WST05N10L is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 120m 3.0A density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST05N10L meet the RoHS and Green Battery protection Pr... See More ⇒

Detailed specifications: WSR60N06, WSR7N65F, WSR80N06, WSR80N08, WSR80N10, WSR80P06, WST02N10, WST03P06, 12N60, WST05N10L, WST2004, WST2005, WST2011, WST2026, WST2066, WST2078, WST2088

Keywords - WST05N10 MOSFET specs

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