FCA22N60N Datasheet. Specs and Replacement

Type Designator: FCA22N60N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: TO3PN

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FCA22N60N datasheet

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FCA22N60N

July 2009 SupreMOS TM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing ... See More ⇒

Detailed specifications: 2N7002VA, 2N7002W, BSS138K, BSS138W, FCA16N60N, IRF220, FCA20N60F, IRF221, IRFP064N, IRF222, FCA35N60, IRF223, FCA36N60NF, IRF3705, FCA47N60, BUZ81, FCA47N60F109

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