All MOSFET. FCA22N60N Datasheet

 

FCA22N60N MOSFET. Datasheet pdf. Equivalent

Type Designator: FCA22N60N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 205 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm

Package: TO3PN

FCA22N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FCA22N60N Datasheet (PDF)

1.1. fca22n60n.pdf Size:527K _fairchild_semi

FCA22N60N
FCA22N60N

July 2009 SupreMOS TM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced

Datasheet: 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , 2SK1058 , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60_F109 .

 
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