All MOSFET. FCA22N60N Datasheet

 

FCA22N60N Datasheet and Replacement


   Type Designator: FCA22N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO3PN
 

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FCA22N60N Datasheet (PDF)

 ..1. Size:527K  fairchild semi
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FCA22N60N

July 2009SupreMOS TMFCA22N60N tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies. By utilizing

Datasheet: 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , 8205A , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 .

History: 2N6764JTXV | FDB8441

Keywords - FCA22N60N MOSFET datasheet

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