All MOSFET. WST3325 Datasheet

 

WST3325 Datasheet and Replacement


   Type Designator: WST3325
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

 WST3325 substitution

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WST3325 Datasheet (PDF)

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WST3325

WST3325 P-Ch MOSFETGeneral Description Product SummeryTheWST3325 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 42m -5.6Acharge for most of the small power switching and load switch applications. Applications The WST3325 meet the RoHS and Green Product requirement , with full

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WST3325

WST3392Dual N-Ch MOSFETGeneral Description Product SummeryThe WST3392 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 3.7A30V 40mdensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST3392 meet the RoHS and Green Product requirement with full

Datasheet: WST2339 , WST2N7002 , WST2N7002A , WST2N7002K , WST3032 , WST3034 , WST3052 , WST3078 , RU7088R , WST3392 , WST3400 , WST3400A , WST3400S , WST3401 , WST3401A , WST3403 , WST3404A .

History: WSF20P03 | NCE2025I | WST2304 | SSW65R120S2 | S2N7002 | WSF50N10G

Keywords - WST3325 MOSFET datasheet

 WST3325 cross reference
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