WST3325 Datasheet. Specs and Replacement

Type Designator: WST3325  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

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WST3325 datasheet

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WST3325

WST3325 P-Ch MOSFET General Description Product Summery TheWST3325 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 42m -5.6A charge for most of the small power switching and load switch applications. Applications The WST3325 meet the RoHS and Green Product requirement , with full ... See More ⇒

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WST3325

WST3392 Dual N-Ch MOSFET General Description Product Summery The WST3392 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 3.7A 30V 40m density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST3392 meet the RoHS and Green Product requirement with full... See More ⇒

Detailed specifications: WST2339, WST2N7002, WST2N7002A, WST2N7002K, WST3032, WST3034, WST3052, WST3078, IRFZ48N, WST3392, WST3400, WST3400A, WST3400S, WST3401, WST3401A, WST3403, WST3404A

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