FCA36N60NF PDF and Equivalents Search

 

FCA36N60NF Specs and Replacement

Type Designator: FCA36N60NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO3PN

FCA36N60NF substitution

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FCA36N60NF datasheet

 ..1. Size:268K  fairchild semi
 fca36n60nf.pdf pdf_icon

FCA36N60NF

March 2013 FCA36N60NF N-Channel SupreMOS FRFET MOSFET 600 V, 34.9 A, 95 m Features Description RDS(on) = 80 m (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductor s next- generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC) employing a deep trench filling process that differentiate it from th... See More ⇒

Detailed specifications: FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , IRF3205 , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , FCA76N60N .

History: FQP10N60C

Keywords - FCA36N60NF MOSFET specs

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