FCA36N60NF Specs and Replacement
Type Designator: FCA36N60NF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO3PN
FCA36N60NF substitution
- MOSFET ⓘ Cross-Reference Search
FCA36N60NF datasheet
fca36n60nf.pdf
March 2013 FCA36N60NF N-Channel SupreMOS FRFET MOSFET 600 V, 34.9 A, 95 m Features Description RDS(on) = 80 m (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductor s next- generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC) employing a deep trench filling process that differentiate it from th... See More ⇒
Detailed specifications: FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , IRF3205 , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , FCA76N60N .
Keywords - FCA36N60NF MOSFET specs
FCA36N60NF cross reference
FCA36N60NF equivalent finder
FCA36N60NF pdf lookup
FCA36N60NF substitution
FCA36N60NF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: HAF1008S | HAF1008L | EMZB08P03H | CS30N20FA9R | AOT66613L | AOSP21313C | AOSP21311C | AOB66918L | AO3415C | AOTF20N40L
Popular searches
2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet
