All MOSFET. FCA36N60NF Datasheet

 

FCA36N60NF Datasheet and Replacement


   Type Designator: FCA36N60NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO3PN
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FCA36N60NF Datasheet (PDF)

 ..1. Size:268K  fairchild semi
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FCA36N60NF

March 2013FCA36N60NF N-Channel SupreMOS FRFET MOSFET 600 V, 34.9 A, 95 mFeatures Description RDS(on) = 80 m (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiate it from th

Datasheet: FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , IRF3205 , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , FCA76N60N .

History: HSCB2016 | IRLU9343PBF | 2SK3437 | HY13N50T | AONS74306 | 15NM70L-TF34-T | VST012N06MS

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