All MOSFET. WST6401 Datasheet

 

WST6401 Datasheet and Replacement


   Type Designator: WST6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: SOT23N
 

 WST6401 substitution

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WST6401 Datasheet (PDF)

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WST6401

WST6401 P-Ch MOSFETGeneral Description Product SummeryThe WST6401 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 135m -2.5Afor most of the small power switching and load switch applications. Applications The WST6401 meet the RoHS and Green Product requirement with full fu

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WST6401

WST6402P-Ch MOSFETGeneral Description Product SummeryThe WST6402 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A-20V 50mand gate charge for most of the synchronous buck converter applications . Applications The WST6402 meet the RoHS and Green Product requirement,with full function Hig

Datasheet: WST4041 , WST4045 , WST6002 , WST6003 , WST6008 , WST6045 , WST6066A , WST6225 , IRF640N , WST6402 , WST8205 , WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , WNM01N10 , WNM2016A .

History: LNH06R200 | DMN1006UCA6 | LNH06R310

Keywords - WST6401 MOSFET datasheet

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