WST6401 MOSFET Datasheet: P-Ch, 20V, 2.5A. Full specification with pinout and replacement list

WST6401 Specs and Replacement

Type Designator: WST6401

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: SOT23N

WST6401 substitution

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WST6401 datasheet

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WST6401 P-Ch MOSFET General Description Product Summery The WST6401 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 135m -2.5A for most of the small power switching and load switch applications. Applications The WST6401 meet the RoHS and Green Product requirement with full fu... See More ⇒

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WST6402 P-Ch MOSFET General Description Product Summery The WST6402 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A -20V 50m and gate charge for most of the synchronous buck converter applications . Applications The WST6402 meet the RoHS and Green Product requirement,with full function Hig... See More ⇒

Detailed specifications: WST4041, WST4045, WST6002, WST6003, WST6008, WST6045, WST6066A, WST6225, IRF640N, WST6402, WST8205, WST8205A, WSTBSS123, WSTBSS138, WCM2079, WNM01N10, WNM2016A