All MOSFET. WST6402 Datasheet

 

WST6402 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WST6402
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 40.8 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23N

 WST6402 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WST6402 Datasheet (PDF)

 ..1. Size:1523K  winsok
 wst6402.pdf

WST6402 WST6402

WST6402P-Ch MOSFETGeneral Description Product SummeryThe WST6402 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A-20V 50mand gate charge for most of the synchronous buck converter applications . Applications The WST6402 meet the RoHS and Green Product requirement,with full function Hig

 8.1. Size:2065K  winsok
 wst6401.pdf

WST6402 WST6402

WST6401 P-Ch MOSFETGeneral Description Product SummeryThe WST6401 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 135m -2.5Afor most of the small power switching and load switch applications. Applications The WST6401 meet the RoHS and Green Product requirement with full fu

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