WST6402 Datasheet and Replacement
Type Designator: WST6402
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40.8 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23N
WST6402 substitution
WST6402 Datasheet (PDF)
wst6402.pdf

WST6402P-Ch MOSFETGeneral Description Product SummeryThe WST6402 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A-20V 50mand gate charge for most of the synchronous buck converter applications . Applications The WST6402 meet the RoHS and Green Product requirement,with full function Hig
wst6401.pdf

WST6401 P-Ch MOSFETGeneral Description Product SummeryThe WST6401 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 135m -2.5Afor most of the small power switching and load switch applications. Applications The WST6401 meet the RoHS and Green Product requirement with full fu
Datasheet: WST4045 , WST6002 , WST6003 , WST6008 , WST6045 , WST6066A , WST6225 , WST6401 , 10N60 , WST8205 , WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , WNM01N10 , WNM2016A , WNM2046C .
History: VS3518AE | IXTQ470P2 | HM2N70R | 2SK1169 | NTMFS4H01N | SM4303PSU | VS2522AL
Keywords - WST6402 MOSFET datasheet
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WST6402 equivalent finder
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History: VS3518AE | IXTQ470P2 | HM2N70R | 2SK1169 | NTMFS4H01N | SM4303PSU | VS2522AL



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