WST6402 MOSFET. Datasheet pdf. Equivalent
Type Designator: WST6402
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.2 nC
trⓘ - Rise Time: 40.8 nS
Cossⓘ - Output Capacitance: 114 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23N
WST6402 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WST6402 Datasheet (PDF)
wst6402.pdf
WST6402P-Ch MOSFETGeneral Description Product SummeryThe WST6402 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A-20V 50mand gate charge for most of the synchronous buck converter applications . Applications The WST6402 meet the RoHS and Green Product requirement,with full function Hig
wst6401.pdf
WST6401 P-Ch MOSFETGeneral Description Product SummeryThe WST6401 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 135m -2.5Afor most of the small power switching and load switch applications. Applications The WST6401 meet the RoHS and Green Product requirement with full fu
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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