WST8205 Datasheet and Replacement
Type Designator: WST8205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 69 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23-6L
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WST8205 Datasheet (PDF)
wst8205.pdf

WST8205Dual N-Ch MOSFETGeneral Description Product SummeryThe WST8205 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 5.8Afor most of the small power switching and load switch applications. Applications The WST8205 meet the RoHS and Green Product High Frequency Point-
wst8205a.pdf

WST8205ADual N-Ch MOSFETGeneral Description Product SummeryThe WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3Afor most of the small power switching and load switch applications.Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5
Keywords - WST8205 MOSFET datasheet
WST8205 cross reference
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History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5



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