WSTBSS123 Datasheet and Replacement
Type Designator: WSTBSS123
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 17 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: SOT23N
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WSTBSS123 Datasheet (PDF)
wstbss123.pdf

WSTBSS123N-Ch MOSFETProduct SummeryGeneral Description The WSTBSS123 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 210m 2.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSTBSS123 meet the RoHS and Green High Frequency Point-of-L
wstbss138.pdf

WSTBSS138N-Ch MOSFETGeneral Description Product SummeryThe WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SM4309PSKP | SSW65R190S2 | WMM07N65C4 | SM4186T9RL | AOI403 | APT10021JFLL | NP180N04TUJ
Keywords - WSTBSS123 MOSFET datasheet
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History: SM4309PSKP | SSW65R190S2 | WMM07N65C4 | SM4186T9RL | AOI403 | APT10021JFLL | NP180N04TUJ



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