All MOSFET. WSTBSS123 Datasheet

 

WSTBSS123 Datasheet and Replacement


   Type Designator: WSTBSS123
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT23N
 

 WSTBSS123 substitution

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WSTBSS123 Datasheet (PDF)

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WSTBSS123

WSTBSS123N-Ch MOSFETProduct SummeryGeneral Description The WSTBSS123 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 210m 2.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSTBSS123 meet the RoHS and Green High Frequency Point-of-L

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WSTBSS123

WSTBSS138N-Ch MOSFETGeneral Description Product SummeryThe WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara

Datasheet: WST6008 , WST6045 , WST6066A , WST6225 , WST6401 , WST6402 , WST8205 , WST8205A , P55NF06 , WSTBSS138 , WCM2079 , WNM01N10 , WNM2016A , WNM2046C , WNM2077 , WNM3018 , WNM3025 .

History: CRST049N08N | STP16NF06LFP

Keywords - WSTBSS123 MOSFET datasheet

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