WSTBSS123 MOSFET Datasheet: N-Ch, 100V, 2A. Full specification with pinout and replacement list

WSTBSS123 Specs and Replacement

Type Designator: WSTBSS123

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: SOT23N

WSTBSS123 substitution

- MOSFET ⓘ Cross-Reference Search

WSTBSS123 datasheet

..1. Size:1706K winsok
wstbss123.pdf pdf_icon

WSTBSS123 N-Ch MOSFET Product Summery General Description The WSTBSS123 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 210m 2.0A density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSTBSS123 meet the RoHS and Green High Frequency Point-of-L... See More ⇒

7.1. Size:1243K winsok
wstbss138.pdf pdf_icon

WSTBSS138 N-Ch MOSFET General Description Product Summery The WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara... See More ⇒

Detailed specifications: WST6008, WST6045, WST6066A, WST6225, WST6401, WST6402, WST8205, WST8205A, IRF3710, WSTBSS138, WCM2079, WNM01N10, WNM2016A, WNM2046C, WNM2077, WNM3018, WNM3025