All MOSFET. WNM01N10 Datasheet

 

WNM01N10 Datasheet and Replacement


   Type Designator: WNM01N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 23.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT23
 

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WNM01N10 Datasheet (PDF)

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WNM01N10

WNM01N10 WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical Rds(on) () DD0.235@ VGS=10V 100 0.255@ VGS=4.5V SSGGSOT-23 Descriptions D3The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is

Datasheet: WST6225 , WST6401 , WST6402 , WST8205 , WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , IRFP250N , WNM2016A , WNM2046C , WNM2077 , WNM3018 , WNM3025 , WNM6002 , WNM7002 , WNMD2167 .

History: IPN80R900P7

Keywords - WNM01N10 MOSFET datasheet

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