WNM01N10 Specs and Replacement
Type Designator: WNM01N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 23.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT23
WNM01N10 substitution
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WNM01N10 datasheet
wnm01n10.pdf
WNM01N10 WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical Rds(on) ( ) D D 0.235@ VGS=10V 100 0.255@ VGS=4.5V S S G G SOT-23 Descriptions D 3 The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is... See More ⇒
Detailed specifications: WST6225, WST6401, WST6402, WST8205, WST8205A, WSTBSS123, WSTBSS138, WCM2079, IRFB4115, WNM2016A, WNM2046C, WNM2077, WNM3018, WNM3025, WNM6002, WNM7002, WNMD2167
Keywords - WNM01N10 MOSFET specs
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