WNM01N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM01N10
Marking Code: NA*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 1.52 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.6 nC
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 23.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT23
WNM01N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM01N10 Datasheet (PDF)
..1. Size:1667K willsemi
wnm01n10.pdf
wnm01n10.pdf
WNM01N10 WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical Rds(on) () DD0.235@ VGS=10V 100 0.255@ VGS=4.5V SSGGSOT-23 Descriptions D3The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
