WNM7002 MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM7002
Marking Code: 701*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.41 nC
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 5.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: SOT23
WNM7002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM7002 Datasheet (PDF)
..1. Size:814K willsemi
wnm7002.pdf
wnm7002.pdf
WNM7002 WNM7002 Single N-Channel, 60V, 0.3A, Power MOSFET Http://www.sh-willsemi.com DVDS (V) Typical RDS(on) () 3.7 @ VGS= 10V 60 S3.8 @ VGS= 4.5V GESD protected SOT-23 Descriptions D The WNM7002 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LBSS123LT1G
