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WNM7002 Specs and Replacement

Type Designator: WNM7002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 5.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm

Package: SOT23

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WNM7002 datasheet

 ..1. Size:814K  willsemi
 wnm7002.pdf pdf_icon

WNM7002

WNM7002 WNM7002 Single N-Channel, 60V, 0.3A, Power MOSFET Http //www.sh-willsemi.com D VDS (V) Typical RDS(on) ( ) 3.7 @ VGS= 10V 60 S 3.8 @ VGS= 4.5V G ESD protected SOT-23 Descriptions D The WNM7002 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is ... See More ⇒

Detailed specifications: WCM2079, WNM01N10, WNM2016A, WNM2046C, WNM2077, WNM3018, WNM3025, WNM6002, IRF9540, WNMD2167, WPM2081, WPM2083, WPM2087, WPM3020, WPM3021, WPM3022, WPT2N31

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