All MOSFET. WNM7002 Datasheet

 

WNM7002 Datasheet and Replacement


   Type Designator: WNM7002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 5.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: SOT23
 

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WNM7002 Datasheet (PDF)

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WNM7002

WNM7002 WNM7002 Single N-Channel, 60V, 0.3A, Power MOSFET Http://www.sh-willsemi.com DVDS (V) Typical RDS(on) () 3.7 @ VGS= 10V 60 S3.8 @ VGS= 4.5V GESD protected SOT-23 Descriptions D The WNM7002 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

Datasheet: WCM2079 , WNM01N10 , WNM2016A , WNM2046C , WNM2077 , WNM3018 , WNM3025 , WNM6002 , K3569 , WNMD2167 , WPM2081 , WPM2083 , WPM2087 , WPM3020 , WPM3021 , WPM3022 , WPT2N31 .

History: PMZB200UNE

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