All MOSFET. FKBA4903 Datasheet

 

FKBA4903 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FKBA4903
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Maximum Power Dissipation (Pd): 35.7 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 26 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 5.5 nC
   Rise Time (tr): 2.2 nS
   Drain-Source Capacitance (Cd): 76 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
   Package: DFN5X6

 FKBA4903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FKBA4903 Datasheet (PDF)

 ..1. Size:886K  cn sino-ic
 fkba4903.pdf

FKBA4903 FKBA4903

FKBA4903N&P Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V = 40VDSoperation voltage. This device is suitable for using R = 25m @ V =10VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packa

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