FKBA4903 Datasheet and Replacement
Type Designator: FKBA4903
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 35.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 76 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: DFN5X6
FKBA4903 substitution
FKBA4903 Datasheet (PDF)
fkba4903.pdf

FKBA4903N&P Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V = 40VDSoperation voltage. This device is suitable for using R = 25m @ V =10VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packa
Datasheet: WPM2081 , WPM2083 , WPM2087 , WPM3020 , WPM3021 , WPM3022 , WPT2N31 , WPT2N32 , 8205A , MT7N65 , MT7N65-220F , SE01P13K , SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA .
History: 24NM60L-T3B-T | AOD504 | HSP18N20 | INK0001AM1 | SWD5N65K | BBL4001 | BUZ84
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History: 24NM60L-T3B-T | AOD504 | HSP18N20 | INK0001AM1 | SWD5N65K | BBL4001 | BUZ84



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