FKBA4903 Specs and Replacement
Type Designator: FKBA4903
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: DFN5X6
FKBA4903 substitution
- MOSFET ⓘ Cross-Reference Search
FKBA4903 datasheet
fkba4903.pdf
FKBA4903 N&P Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low V = 40V DS operation voltage. This device is suitable for using R = 25m @ V =10V DS(ON) GS as a load switch or in PWM applications. Low R For P-Channel MOSFET DS(on) Small Packa... See More ⇒
Detailed specifications: WPM2081, WPM2083, WPM2087, WPM3020, WPM3021, WPM3022, WPT2N31, WPT2N32, IRFP260, MT7N65, MT7N65-220F, SE01P13K, SE100130A, SE100130GA, SE10015, SE100150G, SE100180GA
Keywords - FKBA4903 MOSFET specs
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