MT7N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: MT7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
Rise Time (tr): 79 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm
Package: TO220 TO262 TO263
MT7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MT7N65 Datasheet (PDF)
..1. Size:977K cn sino-ic
mt7n65.pdf
mt7n65.pdf
Oct 2014MT7N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 650VDSsuch as fast switching time, low gate charge, R = 1 @ V =10V, I =3.7ADS(ON) GS DSlow on-state resistance and have a highrugged avalanche characteristicsPin
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
