All MOSFET. MT7N65 Datasheet

 

MT7N65 Datasheet and Replacement


   Type Designator: MT7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO220 TO262 TO263
 

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MT7N65 Datasheet (PDF)

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MT7N65

Oct 2014MT7N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 650VDSsuch as fast switching time, low gate charge, R = 1 @ V =10V, I =3.7ADS(ON) GS DSlow on-state resistance and have a highrugged avalanche characteristicsPin

 0.1. Size:2930K  dyelec
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MT7N65

7N65 650V N-Channel Power MOSFET RDS(ON)

Datasheet: WPM2083 , WPM2087 , WPM3020 , WPM3021 , WPM3022 , WPT2N31 , WPT2N32 , FKBA4903 , 2SK3568 , MT7N65-220F , SE01P13K , SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS .

History: IPP60R280CFD7 | FCPF36N60NT | SI9945BDY-T1 | WMK13N70EM | CS540A4 | TPN2R203NC | SD10425

Keywords - MT7N65 MOSFET datasheet

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