All MOSFET. SE01P13K Datasheet

 

SE01P13K Datasheet and Replacement


   Type Designator: SE01P13K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO252
 

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SE01P13K Datasheet (PDF)

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SE01P13K

SE01P13KP-Channel Enhancement Mode Power MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V =-100VDSoperation voltage. This device is suitable for R = 170m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Package O

Datasheet: WPM3020 , WPM3021 , WPM3022 , WPT2N31 , WPT2N32 , FKBA4903 , MT7N65 , MT7N65-220F , IRF9540N , SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS , SE1003 , SE10030A .

History: STP15NM60ND | SSL60R190SFD | J175 | 2SK2645 | PSMN4R4-80BS | SQ9407EY-T1 | CS16N65FA9H

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