SE01P13K PDF and Equivalents Search

 

SE01P13K Specs and Replacement

Type Designator: SE01P13K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO252

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SE01P13K datasheet

 ..1. Size:453K  cn sino-ic
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SE01P13K

SE01P13K P-Channel Enhancement Mode Power MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V =-100V DS operation voltage. This device is suitable for R = 170m @V =-10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package O... See More ⇒

Detailed specifications: WPM3020, WPM3021, WPM3022, WPT2N31, WPT2N32, FKBA4903, MT7N65, MT7N65-220F, SKD502T, SE100130A, SE100130GA, SE10015, SE100150G, SE100180GA, SE100250GTS, SE1003, SE10030A

Keywords - SE01P13K MOSFET specs

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