SE1216 PDF and Equivalents Search

 

SE1216 Specs and Replacement

Type Designator: SE1216

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 685 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN2X2-6L

SE1216 substitution

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SE1216 datasheet

 ..1. Size:170K  cn sino-ic
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SE1216

Mar 2015 SE1216 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -12V DS operation voltage. This device is suitable for R =11m @V =-4.5V DS(ON) GS using as a load switch or in PWM applications. R =14m @V =-2.5V DS(ON) GS Simple D... See More ⇒

Detailed specifications: SE100250GTS, SE1003, SE10030A, SE10060A, SE10080A, SE100P60, SE120120G, SE12060GA, IRFP450, SE12N50FRA, SE12N65, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A

Keywords - SE1216 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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