All MOSFET. SE1216 Datasheet

 

SE1216 Datasheet and Replacement


   Type Designator: SE1216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X2-6L
 

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SE1216 Datasheet (PDF)

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SE1216

Mar 2015SE1216P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -12VDSoperation voltage. This device is suitable for R =11m @V =-4.5VDS(ON) GSusing as a load switch or in PWM applications. R =14m @V =-2.5VDS(ON) GS Simple D

Datasheet: SE100250GTS , SE1003 , SE10030A , SE10060A , SE10080A , SE100P60 , SE120120G , SE12060GA , 20N50 , SE12N50FRA , SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS , SE15N50FRA , SE18NS65A .

History: GC11N65F | IRFI9Z34G | B4N80 | 7N60DS | AP05N20GH | TMP16N60 | IRFI9Z14GPBF

Keywords - SE1216 MOSFET datasheet

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