SE1216 Specs and Replacement
Type Designator: SE1216
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 685 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN2X2-6L
SE1216 substitution
- MOSFET ⓘ Cross-Reference Search
SE1216 datasheet
se1216.pdf
Mar 2015 SE1216 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -12V DS operation voltage. This device is suitable for R =11m @V =-4.5V DS(ON) GS using as a load switch or in PWM applications. R =14m @V =-2.5V DS(ON) GS Simple D... See More ⇒
Detailed specifications: SE100250GTS, SE1003, SE10030A, SE10060A, SE10080A, SE100P60, SE120120G, SE12060GA, IRFP450, SE12N50FRA, SE12N65, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A
Keywords - SE1216 MOSFET specs
SE1216 cross reference
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SE1216 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP9451GG | AP9992GR
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