SE1216 MOSFET. Datasheet pdf. Equivalent
Type Designator: SE1216
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 685 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN2X2-6L
SE1216 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE1216 Datasheet (PDF)
..1. Size:170K cn sino-ic
se1216.pdf
se1216.pdf
Mar 2015SE1216P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -12VDSoperation voltage. This device is suitable for R =11m @V =-4.5VDS(ON) GSusing as a load switch or in PWM applications. R =14m @V =-2.5VDS(ON) GS Simple D
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
