All MOSFET. SE1216 Datasheet

 

SE1216 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE1216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X2-6L

 SE1216 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE1216 Datasheet (PDF)

 ..1. Size:170K  cn sino-ic
 se1216.pdf

SE1216 SE1216

Mar 2015SE1216P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -12VDSoperation voltage. This device is suitable for R =11m @V =-4.5VDS(ON) GSusing as a load switch or in PWM applications. R =14m @V =-2.5VDS(ON) GS Simple D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MCH5837 | WMJ36N65F2

 

 
Back to Top