All MOSFET. SE12N50FRA Datasheet

 

SE12N50FRA Datasheet and Replacement


   Type Designator: SE12N50FRA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220
 

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SE12N50FRA Datasheet (PDF)

 ..1. Size:1693K  cn sino-ic
 se12n50fra.pdf pdf_icon

SE12N50FRA

SE12N50FRA N-Channel Enhancement-Mode MOSFET with FR Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche VDS = 500V Voltage and Current Improved Shoot-Through RDS(ON) = 0.58 @ VGS=10V FOM Simple Drive Requirement Small Package Outline Surface Mount Device

 9.1. Size:384K  cn sino-ic
 se12n65.pdf pdf_icon

SE12N50FRA

SE12N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =630m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE1003 , SE10030A , SE10060A , SE10080A , SE100P60 , SE120120G , SE12060GA , SE1216 , IRFZ24N , SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G .

History: IXFK52N60Q2 | SIHB12N50C

Keywords - SE12N50FRA MOSFET datasheet

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