SE12N65 MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

SE12N65 Specs and Replacement

Type Designator: SE12N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220 TO220F

SE12N65 substitution

- MOSFET ⓘ Cross-Reference Search

SE12N65 datasheet

..1. Size:384K cn sino-ic
se12n65.pdf pdf_icon

SE12N65 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =630m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

9.1. Size:1693K cn sino-ic
se12n50fra.pdf pdf_icon

SE12N50FRA N-Channel Enhancement-Mode MOSFET with FR Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche VDS = 500V Voltage and Current Improved Shoot-Through RDS(ON) = 0.58 @ VGS=10V FOM Simple Drive Requirement Small Package Outline Surface Mount Device ... See More ⇒

Detailed specifications: SE10030A, SE10060A, SE10080A, SE100P60, SE120120G, SE12060GA, SE1216, SE12N50FRA, AO4407, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A, SE1991G, SE1991GA