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SE138U Specs and Replacement

Type Designator: SE138U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SOT323

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SE138U datasheet

 ..1. Size:617K  cn sino-ic
 se138u.pdf pdf_icon

SE138U

SE138U N-Channel Enhancement-Mode MOSFET Revision B General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 60V DS Voltage and Current Improved Shoot-Through R = 0.7 @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S... See More ⇒

Detailed specifications: SE10060A, SE10080A, SE100P60, SE120120G, SE12060GA, SE1216, SE12N50FRA, SE12N65, BS170, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A, SE1991G, SE1991GA, SE200100G

Keywords - SE138U MOSFET specs

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