SE138U Datasheet and Replacement
Type Designator: SE138U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT323
SE138U substitution
SE138U Datasheet (PDF)
se138u.pdf

SE138UN-Channel Enhancement-Mode MOSFETRevision: BGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 60VDSVoltage and Current Improved Shoot-Through R = 0.7 @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS
Datasheet: SE10060A , SE10080A , SE100P60 , SE120120G , SE12060GA , SE1216 , SE12N50FRA , SE12N65 , 18N50 , SE150110G , SE150180G , SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G , SE1991GA , SE200100G .
History: FQB65N06TM | MS48P25 | SI9433BDY | HFS630 | AFC1539 | IXFK66N50Q2 | HFS50N06
Keywords - SE138U MOSFET datasheet
SE138U cross reference
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History: FQB65N06TM | MS48P25 | SI9433BDY | HFS630 | AFC1539 | IXFK66N50Q2 | HFS50N06



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