SE18NS65A PDF and Equivalents Search

 

SE18NS65A Specs and Replacement

Type Designator: SE18NS65A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

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SE18NS65A datasheet

 ..1. Size:512K  cn sino-ic
 se18ns65a.pdf pdf_icon

SE18NS65A

Apr 2015 SE18NS65A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =650V DS Voltage and Current Improved Shoot-Through R =160m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin conf... See More ⇒

Detailed specifications: SE1216, SE12N50FRA, SE12N65, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, 10N65, SE1991G, SE1991GA, SE200100G, SE20040, SE20075, SE2060, SE20N110, SE20P03

Keywords - SE18NS65A MOSFET specs

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