All MOSFET. SE18NS65A Datasheet

 

SE18NS65A Datasheet and Replacement


   Type Designator: SE18NS65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

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SE18NS65A Datasheet (PDF)

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SE18NS65A

Apr 2015SE18NS65AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =160m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin conf

Datasheet: SE1216 , SE12N50FRA , SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS , SE15N50FRA , STP80NF70 , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 , SE2060 , SE20N110 , SE20P03 .

History: DM4N65E-F

Keywords - SE18NS65A MOSFET datasheet

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