All MOSFET. SE1991G Datasheet

 

SE1991G Datasheet and Replacement


   Type Designator: SE1991G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220 TO263
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SE1991G Datasheet (PDF)

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SE1991G

SE1991GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee

 0.1. Size:359K  cn sino-ic
 se1991ga.pdf pdf_icon

SE1991G

SE1991GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSe

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History: ZXMN3A14FTA | HLML6401 | IPL60R095CFD7 | AP4501AGM-HF | WMK9N50D1B | UFZ24NL-TN3 | AP85T03GH-HF

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