SE1991G MOSFET. Datasheet pdf. Equivalent
Type Designator: SE1991G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 223 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 115 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 1360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm
Package: TO220 TO263
SE1991G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE1991G Datasheet (PDF)
se1991g.pdf
SE1991GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee
se1991ga.pdf
SE1991GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSe
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