SE200100G MOSFET. Datasheet pdf. Equivalent
Type Designator: SE200100G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 63.2 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 333.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO220 TO263
SE200100G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE200100G Datasheet (PDF)
se200100g.pdf
SE200100GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =200VDScharge. R =11m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di
kse200.pdf
KSE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to KSE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V
kse200.pdf
KSE200POWER TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (KSE200)KSE200POWER TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 2 (KSE200)
se20075.pdf
SE20075N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V = 200VDSoperation voltage. This device is suitable for R =15.8m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
se20040.pdf
SE20040N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V = 200VDSoperation voltage. This device is suitable for R =36.4m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
