SE200100G Specs and Replacement
Type Designator: SE200100G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 333.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
SE200100G substitution
- MOSFET ⓘ Cross-Reference Search
SE200100G datasheet
se200100g.pdf
SE200100G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =200V DS charge. R =11m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di... See More ⇒
kse200.pdf
KSE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒
kse200.pdf
KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KSE200) KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 2 (KSE200) ... See More ⇒
Detailed specifications: SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A, SE1991G, SE1991GA, SI2302, SE20040, SE20075, SE2060, SE20N110, SE20P03, SE2101, SE2101E, SE2102M
Keywords - SE200100G MOSFET specs
SE200100G cross reference
SE200100G equivalent finder
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SE200100G substitution
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