SE200100G - описание и поиск аналогов

SE200100G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =200V DS charge. R =11m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di

KSE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KSE200) KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 2 (KSE200)

SE20075 N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V = 200V DS operation voltage. This device is suitable for R =15.8m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

SE20040 N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V = 200V DS operation voltage. This device is suitable for R =36.4m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline