All MOSFET. SE2060 Datasheet

 

SE2060 Datasheet and Replacement


   Type Designator: SE2060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3X3EP
 

 SE2060 substitution

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SE2060 Datasheet (PDF)

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SE2060

Nov 2014SE2060N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =5.5m @V =4.5DS(ON) GSFOM R =8m @V =2.5DS(ON) GS Simple Drive Requirement Small Package Outline S

Datasheet: SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 , 2N60 , SE20N110 , SE20P03 , SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A .

Keywords - SE2060 MOSFET datasheet

 SE2060 cross reference
 SE2060 equivalent finder
 SE2060 lookup
 SE2060 substitution
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