SE2060 Specs and Replacement
Type Designator: SE2060
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DFN3X3EP
SE2060 substitution
- MOSFET ⓘ Cross-Reference Search
SE2060 datasheet
se2060.pdf
Nov 2014 SE2060 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =20V DS Voltage and Current Improved Shoot-Through R =5.5m @V =4.5 DS(ON) GS FOM R =8m @V =2.5 DS(ON) GS Simple Drive Requirement Small Package Outline S... See More ⇒
Detailed specifications: SE150180GTS, SE15N50FRA, SE18NS65A, SE1991G, SE1991GA, SE200100G, SE20040, SE20075, 20N50, SE20N110, SE20P03, SE2101, SE2101E, SE2102M, SE2300, SE2302U, SE2305A
Keywords - SE2060 MOSFET specs
SE2060 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SE9926 | NTD60N03-001 | SW4N60 | AP60U03GH
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