All MOSFET. SE20N110 Datasheet

 

SE20N110 Datasheet and Replacement


   Type Designator: SE20N110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN3X3
 

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SE20N110 Datasheet (PDF)

 ..1. Size:367K  cn sino-ic
 se20n110.pdf pdf_icon

SE20N110

May 2015SE20N110N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =3.9m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin confi

 9.1. Size:442K  bruckewell
 mse20n06n.pdf pdf_icon

SE20N110

Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited

Datasheet: SE15N50FRA , SE18NS65A , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 , SE2060 , STF13NM60N , SE20P03 , SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , SE2333 .

History: 7N60GS | SSH10N80 | TMP16N60 | FQB5N60TM | SE12N65 | B4N80 | MDP1991

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