SE20N110 MOSFET Datasheet: N-Ch, 20V, 110A. Full specification with pinout and replacement list

SE20N110 Specs and Replacement

Type Designator: SE20N110

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: DFN3X3

SE20N110 substitution

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SE20N110 datasheet

..1. Size:367K cn sino-ic
se20n110.pdf pdf_icon

May 2015 SE20N110 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =20V DS Voltage and Current Improved Shoot-Through R =3.9m @V =4.5V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin confi... See More ⇒

9.1. Size:442K bruckewell
mse20n06n.pdf pdf_icon

Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited ... See More ⇒

Detailed specifications: SE15N50FRA, SE18NS65A, SE1991G, SE1991GA, SE200100G, SE20040, SE20075, SE2060, IRF520, SE20P03, SE2101, SE2101E, SE2102M, SE2300, SE2302U, SE2305A, SE2333