All MOSFET. SE20N110 Datasheet

 

SE20N110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE20N110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN3X3

 SE20N110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE20N110 Datasheet (PDF)

 ..1. Size:367K  cn sino-ic
 se20n110.pdf

SE20N110 SE20N110

May 2015SE20N110N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =3.9m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin confi

 9.1. Size:442K  bruckewell
 mse20n06n.pdf

SE20N110 SE20N110

Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited

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