SE20P03 PDF and Equivalents Search

 

SE20P03 Specs and Replacement

Type Designator: SE20P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO252 TO251

SE20P03 substitution

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SE20P03 datasheet

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SE20P03

SE20P03 P-Channel MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, V =-30V DS such as fast switching time, low gate charge, R =50m @V =-10V DS(ON) GS low on-state resistance and have a high rugged avalanche characteristics Pin configurations See Diagram below A... See More ⇒

Detailed specifications: SE18NS65A, SE1991G, SE1991GA, SE200100G, SE20040, SE20075, SE2060, SE20N110, IRF2807, SE2101, SE2101E, SE2102M, SE2300, SE2302U, SE2305A, SE2333, SE2N60B

Keywords - SE20P03 MOSFET specs

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