All MOSFET. SE20P03 Datasheet

 

SE20P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE20P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252 TO251

 SE20P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE20P03 Datasheet (PDF)

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 se20p03.pdf

SE20P03 SE20P03

SE20P03P-Channel MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =-30VDSsuch as fast switching time, low gate charge, R =50m @V =-10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee Diagram belowA

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6757

 

 
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