All MOSFET. SE20P03 Datasheet

 

SE20P03 Datasheet and Replacement


   Type Designator: SE20P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252 TO251
 

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SE20P03 Datasheet (PDF)

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SE20P03

SE20P03P-Channel MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =-30VDSsuch as fast switching time, low gate charge, R =50m @V =-10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee Diagram belowA

Datasheet: SE18NS65A , SE1991G , SE1991GA , SE200100G , SE20040 , SE20075 , SE2060 , SE20N110 , IRFB31N20D , SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , SE2333 , SE2N60B .

History: IXFT30N60X | APQ84SN06A

Keywords - SE20P03 MOSFET datasheet

 SE20P03 cross reference
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