All MOSFET. SE2333 Datasheet

 

SE2333 Datasheet and Replacement


   Type Designator: SE2333
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23
 

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SE2333 Datasheet (PDF)

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SE2333

SE2333P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -20VDSoperation voltage. This device is suitable for R = 20m @ V =-4.5VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

Datasheet: SE20N110 , SE20P03 , SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , RU6888R , SE2N60B , SE2N7002 , SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 .

History: SI2341DS | PHK12NQ03LT | FCD360N65S3R0 | IPI120N04S4-01 | SWI230R45VT | AOD484 | 2SJ230

Keywords - SE2333 MOSFET datasheet

 SE2333 cross reference
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