SE2333 PDF and Equivalents Search

 

SE2333 Specs and Replacement

Type Designator: SE2333

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

SE2333 substitution

- MOSFET ⓘ Cross-Reference Search

 

SE2333 datasheet

 ..1. Size:568K  cn sino-ic
 se2333.pdf pdf_icon

SE2333

SE2333 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -20V DS operation voltage. This device is suitable for R = 20m @ V =-4.5V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

Detailed specifications: SE20N110, SE20P03, SE2101, SE2101E, SE2102M, SE2300, SE2302U, SE2305A, AO3400A, SE2N60B, SE2N7002, SE2N7002K, SE30100B, SE30150, SE30150A, SE30150B, SE3018

Keywords - SE2333 MOSFET specs

 SE2333 cross reference

 SE2333 equivalent finder

 SE2333 pdf lookup

 SE2333 substitution

 SE2333 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.