All MOSFET. SE2N60B Datasheet

 

SE2N60B Datasheet and Replacement


   Type Designator: SE2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO252
 

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SE2N60B Datasheet (PDF)

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SE2N60B

Oct 2014 SE2N60B N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 600V such as fast switching time, low gate charge, RDS(ON) = 3.4 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin co

Datasheet: SE20P03 , SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , SE2333 , IRF730 , SE2N7002 , SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , SE30200 .

History: QS8F2 | DACMI180N120BZK | HM24N20KA | SVS7N70DD2TR | GSM6830 | SPA12N50C3 | HUF76419S3ST

Keywords - SE2N60B MOSFET datasheet

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