All MOSFET. SE2N60B Datasheet

 

SE2N60B Datasheet and Replacement


   Type Designator: SE2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO252
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SE2N60B Datasheet (PDF)

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SE2N60B

Oct 2014 SE2N60B N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 600V such as fast switching time, low gate charge, RDS(ON) = 3.4 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin co

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History: TPCS8214 | HLML6401 | STH12N120K5-2 | TMAN23N50 | GKI04031 | SWF830D1 | AP85T03GH-HF

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