SE2N60B PDF and Equivalents Search

 

SE2N60B Specs and Replacement

Type Designator: SE2N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm

Package: TO252

SE2N60B substitution

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SE2N60B datasheet

 ..1. Size:1061K  cn sino-ic
 se2n60b.pdf pdf_icon

SE2N60B

Oct 2014 SE2N60B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 600V such as fast switching time, low gate charge, RDS(ON) = 3.4 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin co... See More ⇒

Detailed specifications: SE20P03, SE2101, SE2101E, SE2102M, SE2300, SE2302U, SE2305A, SE2333, IRFB31N20D, SE2N7002, SE2N7002K, SE30100B, SE30150, SE30150A, SE30150B, SE3018, SE30200

Keywords - SE2N60B MOSFET specs

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