SE2N7002 Datasheet and Replacement
Type Designator: SE2N7002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25(max) nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2(typ) Ohm
Package: SOT23
SE2N7002 substitution
SE2N7002 Datasheet (PDF)
se2n7002.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)
se2n7002k.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002K 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)
Datasheet: SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , SE2333 , SE2N60B , IRFZ48N , SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , SE30200 , SE3050 .
History: 9N100 | PSMN1R0-30YLD | KIA4N60H-262 | FS5KM-5 | IPB093N04LG | SIR862DP | 2SK2299
Keywords - SE2N7002 MOSFET datasheet
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History: 9N100 | PSMN1R0-30YLD | KIA4N60H-262 | FS5KM-5 | IPB093N04LG | SIR862DP | 2SK2299



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