All MOSFET. SE2N7002 Datasheet

 

SE2N7002 Datasheet and Replacement


   Type Designator: SE2N7002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25(max) nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2(typ) Ohm
   Package: SOT23
 

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SE2N7002 Datasheet (PDF)

 ..1. Size:280K  cn sino-ic
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SE2N7002

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

 0.1. Size:281K  cn sino-ic
 se2n7002k.pdf pdf_icon

SE2N7002

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2N7002K 60V,300mA N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 300mA on-resistance and cost-effectiveness. RDS(ON)

Datasheet: SE2101 , SE2101E , SE2102M , SE2300 , SE2302U , SE2305A , SE2333 , SE2N60B , IRFZ48N , SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , SE30200 , SE3050 .

History: AS0130KA | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | PD506BA | SM140R50CT1TL

Keywords - SE2N7002 MOSFET datasheet

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