All MOSFET. SE30200 Datasheet

 

SE30200 Datasheet and Replacement


   Type Designator: SE30200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: PPAK5X6
 

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SE30200 Datasheet (PDF)

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SE30200

Mar 2015SE30200N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30ADS(ON) GS DSFOM R =2.1m @V =4.5 @I =25ADS(ON) GS DS Simple Drive Requirement Smal

Datasheet: SE2N60B , SE2N7002 , SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , AON7403 , SE3050 , SE472 , SE3060D , SE3080A , SE3080K , SE3080G , SE3082G , SE3090K .

History: HMS21N60F | IRFSL3107PBF | AON6206

Keywords - SE30200 MOSFET datasheet

 SE30200 cross reference
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